BLF642 NXP Semiconductors, BLF642 Datasheet - Page 2

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications

BLF642

Manufacturer Part Number
BLF642
Description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF642
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
Type number Package
Symbol
V
Symbol Parameter
R
BLF642
V
T
T
stg
j
DS
GS
th(j-c)
Communication transmitter applications in the HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range
Connected to flange
R
th(j-c)
is measured under RF conditions.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain
gate
source
Description
Name Description
-
All information provided in this document is subject to legal disclaimers.
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
Rev. 2 — 22 July 2011
Conditions
[1]
Conditions
T
Simplified outline
case
Broadband power LDMOS transistor
= 80 C; P
1
2
-
Min
-
0.5
65
L
= 35 W
3
Graphic symbol
© NXP B.V. 2011. All rights reserved.
Max
65
+11
+150
200
BLF642
[1]
2
sym112
Typ
1.6
Version
1
3
Unit
V
V
C
C
2 of 12
Unit
K/W

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