BLF642 NXP Semiconductors, BLF642 Datasheet - Page 4

• Manufacturer Part Number: BLF642
• Description: A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLF642
Product data sheet
Fig 1.
(dB)
G
P
22
20
18
16
14
0
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 32 V; I
8.1.1 1-Tone CW
G
η
10
8.1 RF performance
D
P
Dq
= 200 mA; f = 1300 MHz.
The following figures are measured in a class-AB production test circuit.
20
30
40
All information provided in this document is subject to legal disclaimers.
001aan775
P
L
(W)
50
Rev. 2 — 22 July 2011
80
60
40
20
0
(%)
η
D
Fig 2.
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
P
22
20
18
16
14
0
V
Power gain as a function of load power;
typical values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 50 mA
= 100 mA
= 150 mA
= 200 mA
= 250 mA
= 300 mA
= 350 mA
= 32 V; f = 1300 MHz.
10
Broadband power LDMOS transistor
20
(7)
(6)
(5)
(4)
(3)
(2)
(1)
30
© NXP B.V. 2011. All rights reserved.
40
001aan776
BLF642
P
L
(W)
50
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