BLF642 NXP Semiconductors, BLF642 Datasheet - Page 7

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications

BLF642

Manufacturer Part Number
BLF642
Description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF642
Product data sheet
Table 8.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
metallization); thickness copper plating = 35
[1]
[2]
[3]
Component
C1
C2
C3
C4
C5
C6
C11, C12
C13, C14
C15
C16
C17
C18, C19
C20
R1
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
TDK C570X7R1H106KT000N or capacitor of same quality.
List of components
All information provided in this document is subject to legal disclaimers.
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
wire resistor
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Rev. 2 — 22 July 2011
Figure 8
.
r
= 2.2; height = 0.762 mm; Copper (top/bottom
m.
Broadband power LDMOS transistor
Value
22 pF
5.1 pF
4.3 pF
10 pF
10 F; 50 V
22 nF
22 pF
6.2 pF
4.3 pF
1.2 pF
22 pF
10 F
470 F; 63 V
100 
© NXP B.V. 2011. All rights reserved.
BLF642
[1]
[2]
[2]
[2]
[1]
[1]
[1]
[1]
[1]
[3]
Remarks
7 of 12

Related parts for BLF642