BLF642 NXP Semiconductors, BLF642 Datasheet - Page 6

• Manufacturer Part Number: BLF642
• Description: A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF642
Product data sheet
Fig 6.
(dB)
G
p
20
19
18
17
0
V
Power gain and drain efficiency as function of
average load power; typical values
DS
= 32 V; I
8.1.4 DVB-T
8.2 Test circuit
5
G
η
D
p
Dq
= 200 mA; f = 1300 MHz.
10
Fig 8.
C1
15
See
Component layout for class-AB amplifier
C2
Table 8
20
All information provided in this document is subject to legal disclaimers.
P
001aao321
L(AV)
C5
+
-
for a list of components.
C3
(W)
25
Rev. 2 — 22 July 2011
60
40
20
0
(%)
η
D
28.4 mm
40 mm
C6
R1
Fig 7.
IMD
5.9 mm
C4
(dBc)
shldr
-20
-40
-60
0
0
V
PAR and IMD
power; typical values
DS
= 32 V; I
10.3 mm
6 mm
PAR
IMD
5
Broadband power LDMOS transistor
shldr
Dq
24.4 mm
= 200 mA; f = 1300 MHz.
C11
C12
shldr
10
C14
C13
as function of average load
37.7 mm
15
C19
C18
C15
© NXP B.V. 2011. All rights reserved.
20
P
001aao320
BLF642
L(AV)
+
-
(W)
25
C16
12
8
4
0
001aao322
C20
PAR
C17
(dB)
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