BLF642 NXP Semiconductors, BLF642 Datasheet - Page 3

• Manufacturer Part Number: BLF642
• Description: A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Application information
BLF642
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
T
The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power.
Symbol Parameter
V
I
I
I
g
C
C
Mode of operation
CW, class-AB
V
V
R
C
DSS
DSX
GSS
j
h
fs
(BR)DSS
GS(th)
GSq
DS(on)
iss
oss
rs
= 25
= 25


C; unless otherwise specified.
C; I
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
input capacitance
output capacitance
feedback capacitance
Characteristics per section
RF performance in a common-source class-AB circuit
Dq
= 0.2 A.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
f
(MHz)
1300
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
= 1.75 A
= 32 V; I
= 32 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
V
(V)
32
DS
Broadband power LDMOS transistor
D
DS
DS
DS
DS
DS
D
Dq
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
= 50 mA
= 2.5 A
DS
= 32 V; f = 1300 MHz at rated load
= 250 mA
= 32 V
= 32 V;
= 32 V;
= 32 V;
= 0 V
P
(W)
35
L
G
(dB)
> 18
Min Typ
65
1.4
1.5
-
8.0
-
-
-
-
-
-
p
© NXP B.V. 2011. All rights reserved.
-
1.9
2.0
-
9.0
-
3.3
300
39
15
0.84
BLF642
Max Unit
-
2.4
2.5
1.4
-
50
-
-
-
-
-

(%)
> 59
D
3 of 12
V
V
V
A
A
nA
S
m
pF
pF
pF