BLF642 NXP Semiconductors, BLF642 Datasheet - Page 5

• Manufacturer Part Number: BLF642
• Description: A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF642
Product data sheet
Fig 3.
(dB)
G
P
21
20
19
18
17
0
V
carrier spacing = 100 kHz.
Power gain and drain efficiency as function of
average load power; typical values
DS
= 32 V; I
8.1.2 2-Tone CW
8.1.3 Pulsed CW
G
η
D
P
Dq
10
= 200 mA; f = 1300 MHz;
Fig 5.
V
Power gain and drain efficiency as a function of average power; typical values
20
DS
= 32 V; I
P
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan777
(W)
Dq
(dB)
G
= 200 mA; f = 1300 MHz
30
p
22
20
18
16
14
Rev. 2 — 22 July 2011
80
60
40
20
0
(%)
η
0
D
10
G
η
Fig 4.
D
p
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
-20
-40
-60
20
0
0
V
Third order intermodulation distortion as a
function of average load power; typical values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 50 mA
= 100 mA
= 150 mA
= 200 mA
= 250 mA
= 300 mA
= 350 mA
= 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
30
Broadband power LDMOS transistor
10
40
001aao319
P
L
(W)
50
(1)
(2)
(3)
(4)
(5)
(6)
(7)
80
60
40
20
0
(%)
η
D
20
P
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan778
BLF642
(W)
30
5 of 12