BF1102 NXP Semiconductors, BF1102 Datasheet - Page 3

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2000 Apr 11
handbook, halfpage
Per MOS-FET unless otherwise specified
V
I
I
I
P
T
T
R
D
G1
G2
SYMBOL
stg
j
SYMBOL
DS
tot
Dual N-channel dual gate MOS-FETs
th j-s
(mW)
P tot
250
200
150
100
50
0
0
Fig.2 Power derating curve.
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C
3
CONDITIONS





65

MIN.
BF1102; BF1102R
VALUE
240
7
40
10
10
200
+150
150
Product specification
MAX.
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT