BF1102 NXP Semiconductors, BF1102 Datasheet - Page 9

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2000 Apr 11
handbook, halfpage
handbook, full pagewidth
crosstalk
Dual N-channel dual gate MOS-FETs
Active amplifier: V
Non-active amplifier: V
Source and load impedances: 50  (both amplifiers).
T
Fig.19 Crosstalk as a function of frequency:
level
(dB)
amb
−20
−40
−60
−80
= 25 C.
0
0
Output level of non-active amplifier related
to output level of active amplifier; typical
values.
200
DS
= 5 V; V
DS
= V
400
G2
G1-S
= 4 V; I
R GEN
= 0 V.
50 Ω
V I
Fig.20 Cross-modulation test set-up (for one MOS-FET).
600
D
= 15 mA.
50 Ω
R2
800
f (MHz)
MCD972
4.7 nF
C2
1000
V GG
10 kΩ
R G1
R1
V AGC
4.7 nF
C1
9
DUT
V DS
L1
≈
4.7 nF
4.7 nF
2.2 μH
C3
C4
MGS315
R L
50 Ω
BF1102; BF1102R
Product specification