BF1102 NXP Semiconductors, BF1102 Datasheet - Page 7

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2000 Apr 11
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FETs
(dB μV)
V
R
Fig.11 Gate 1 current as a function of gate 2
V
R
Fig.13 Unwanted voltage for 1% cross-modulation
V unw
DS
DS
G1
G1
(μA)
I G1
120
110
100
= 5 V; T
= 120 k (connected to V
= 5 V; V
= 120 k (connected to V
90
80
40
30
20
10
0
0
0
voltage; typical values.
as a function of gain reduction;
typical values.
j
GG
= 25 C.
= 5 V; f
w
20
= 50 MHz; f
2
GG
GG
); see Fig.20.
); see Fig.20.
unw
gain reduction (dB)
= 60 MHz; T
40
4
V G1-S = 5 V
V G2-S (V)
4.5 V
3.5 V
3 V
4 V
amb
MGS368
MGS369
= 25 C;
60
6
7
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
V
R
Fig.12 Typical gain reduction as a function of the
V
R
Fig.14 Drain current as a function of gain
DS
DS
G1
G1
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 120 k (connected to V
= 5 V; V
= 120 k (connected to V
20
16
12
0
8
4
0
0
0
AGC voltage; see Fig.20.
reduction; typical values.
GG
GG
= 5 V; f = 50 MHz; T
= 5 V; f = 50 MHz; T
10
1
20
GG
GG
BF1102; BF1102R
); see Fig.20.
); see Fig.20.
2
amb
amb
30
= 25 C;
= 25 C;
gain reduction (dB)
Product specification
3
40
V AGC (V)
MCD968
MCD969
50
4