BF1102 NXP Semiconductors, BF1102 Datasheet - Page 5

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ALL GRAPHS FOR ONE MOS-FET
2000 Apr 11
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FETs
V
T
V
T
Fig.5
j
(μA)
j
DS
DS
(mA)
I G1
= 25 C.
= 25 C.
I D
Fig.3 Transfer characteristics; typical values.
160
120
= 5 V.
= 5 V.
80
40
30
20
10
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
0.5
0.8
V G2-S = 4 V
1
1.2
3.5 V
V G2-S = 4 V
3 V
1.5
1.6
V G1-S (V)
2.5 V
2
V G1-S (V)
2.0
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
2 V
MGS360
MGS362
2.4
2.5
5
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.6
(mS)
(mA)
G2-S
j
|y fs |
DS
j
= 25 C.
= 25 C.
I D
= 5 V.
Fig.4 Output characteristics; typical values.
30
20
10
50
40
30
20
10
= 4 V.
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
10
4
V G1-S = 1.5 V
BF1102; BF1102R
V G2-S = 4 V
1.4 V
1.3 V
1.2 V
1.1 V
1 V
6
20
Product specification
3.5 V
2 V
I D (mA)
8
V DS (V)
2.5 V
MGS361
MGS363
3 V
30
10