BF1102 NXP Semiconductors, BF1102 Datasheet - Page 6

• Manufacturer Part Number: BF1102
• Description: Enhancement type Field-Effect Transistor in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2000 Apr 11
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FETs
V
Fig.7
V
R
Fig.9
DS
(mA)
G2-S
(mA)
G1
I D
I D
= 5 V; V
connected to V
25
20
15
10
30
20
10
= 4 V; T
5
0
0
0
0
Drain current as a function of gate 1 current;
Drain current as a function of gate 1 (= V
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C.
= 4 V; T
2
R G1 = 47 kΩ
GG
; see Fig.20.
20
j
= 25 C.
4
6
V GG = V DS (V)
40
68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
I G1 (μA)
8
MGS366
MGS364
60
10
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.8
V
R
Fig.10 Drain current as a function of gate 2
DS
DS
G1
(mA)
G1
(mA)
I D
I D
= 5 V; V
= 120 k (connected to V
= 5 V; T
= 120 k (connected to V
20
16
12
15
10
8
4
0
5
0
0
0
Drain current as a function of gate 1 supply
voltage (= V
voltage; typical values.
j
G2-S
= 25 C.
= 4 V; T
1
2
j
= 25 C.
GG
2
); typical values.
GG
GG
BF1102; BF1102R
); see Fig.20.
); see Fig.20.
3
4
V G1-S = 5 V
Product specification
V G2-S (V)
4
V GG (V)
4.5 V
3 V
4 V
3.5 V
MGS365
MGS367
6
5