ST72344S4 STMicroelectronics, ST72344S4 Datasheet - Page 245

• Manufacturer Part Number: ST72344S4
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST72344S4

• Up To 16 Kbytes Program Memory: single voltage extended Flash (XFlash) with readout and write protection, in-circuit and inapplication programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention
• 256 Bytes Data Eeprom With Readout Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: crystal/ceramic resonator oscillators, high-accuracy internal RC oscillator or external clock
• 5 Power-saving Modes: Slow, Wait, Halt, Auto-wakeup from Halt and Active-halt
• 16-bit Timer A With: 1 input capture, 1 output compares, external clock input, PWM and pulse generator modes
• 16-bit Timer B With: 2 input captures, 2 output compares, PWM and pulse generator modes

ST72344xx ST72345xx
17
Revision history
Table 126. Document revision history
29-April-2006
23-Oct-2006
Date
Revision
1
2
First release on internet
Removed references to BGA56 and QFN40 packages
TQFP package naming changed to LQFP (Low-profile Quad Flat)
Changed number of I/O ports on first page
PDVD (Power Down Voltage Detector) replaced by AVD (Auxiliary
Voltage Detector)
Modified note 3 to
Added PF4 to
Modified
Modified
Changed RCCR table in
References to PDVDF, PDVDIE corrected to AVDF, AVDIE:
Section 7.6.2 on page 49
Current characteristics
General operating conditions table updated,
Data updated in
Table modified in
Notes adjusted for table in
Modified
Table in
Updated
Added
Table in
Absolute maximum ratings and electrical sensitivity table updated,
Section 13.8.3 on page 214
Added note 1 to V
Table in
Modified graphs in
t
Updated
Updated
Modified default values for option byte 2 and 3 on
page 234
Added option list on
Added
Added known limitations:
page
and
Modified
Changed status of the document (datasheet instead of preliminary data)
g(RSTL)in
Section 16.8: Flash write/erase protection on page 243
Doc ID 12321 Rev 5
242,
Table 96 on page 209
Section 15.3: Development tools on page 236
Table 93 on page 205
Table 101 on page 212
Table 108 on page 216
Memory access on page 31
Figure
Section 13.4 on page 204
Table 94 on page 208
Table 111 on page 224
Table 118 on page 231
Section 16.7 on page 244
updated in
Section 16.7: Programming of EEPROM data on page
Figure 3 on page 18
8,
Table 88 on page
Table 89 on page 203
IL
Table 4 on page 24
Figure 9 on page 33
Table 108 on page 216
and V
Option byte 2 on page 234
Table 13.10 on page 222
Table 85 on page 201
Section 7.3 on page 43
Section 16.6: In-application programming on
IH
Table 90 on page 203
in
and
modified
Table 107 on page 215
Changes
modified
modified (for V
Figure 96 on page 209
202, note replaced
and
(for V
and
Figure 4 on page 19
DD
=5V)
Figure 10 on page 34
Table 87 on page 202
updated
DD
(f
= 3.3V and V
Option byte 2 on
RC
=1 MHz)
Revision history
DD
245/247
=2.7V)
244,