FGA90N33ATD Fairchild Semiconductor, FGA90N33ATD Datasheet
FGA90N33ATD
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FGA90N33ATD Summary of contents
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... Repetitive test , Pulse width=100usec , Duty=0.1 (2) Half sine wave , D<0.01, Pulse width<5usec *I pluse limited by max Tj C ©2011 Fairchild Semiconductor Corporation FGA90N33ATD Rev. C0 General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 20A C tions where low conduction and switching losses are essential ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA90N33ATD Rev. C0 Packaging Package Type TO-3P Tube T = 25°C unless otherwise noted C Test Conditions = 0V 400μ ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery rr Current Q Diode Reverse Recovery Charge rr FGA90N33ATD Rev 25°C unless otherwise noted C Test Conditions 10A 125 ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Common Emitter V = 15V GE 1.8 1.6 1.4 1.2 1.0 0 Collector-EmitterCase Temperature, T FGA90N33ATD Rev. C0 Figure 2. Typical Output Characteristics 160 10V 9V 120 [V] CE Figure 4. Transfer Characteristics 160 120 80 40 ...
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... V = 100V Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 200 100 d(on Gate Resistance, R FGA90N33ATD Rev. C0 Figure 8. Capacitance Characteristics GE 4000 Common Emitter 125 C C 3000 2000 1000 0.1 [V] GE Figure 10. SOA Characteristics 500 100 10 ...
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... Collector Current, I Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics 400 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA90N33ATD Rev. C0 Figure 14. Turn-off Characteristics vs. Common Emitter d(on) 100 100 60 80 100 0 [A] C 200 ...
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... Figure 19. Reverse Recovery Current 40 30 200A/ μ s di/dt = 100A Forward Current 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 1E-5 FGA90N33ATD Rev. C0 Figure 18. Stored Charge μ [A] F μ [A] F Figure 20.Transient Thermal Impedance of IGBT 0.0001 0.001 0.01 Rectangular Pulse Duration [sec] 7 200A/ μ ...
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... Mechanical Dimensions FGA90N33ATD Rev. C0 TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA90N33ATD Rev.C0 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...