FGA90N33ATD Fairchild Semiconductor, FGA90N33ATD Datasheet - Page 4
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FGA90N33ATD
Manufacturer Part Number
FGA90N33ATD
Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA90N33ATD.pdf
(9 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGA90N33ATD
Manufacturer:
FSC
Quantity:
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Company:
Part Number:
FGA90N33ATDTU
Manufacturer:
TAIYO
Quantity:
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FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
C
o
1
C
50
15V
12V
1
20V
2
75
2
10V
3
I
C
90A
40A
= 20A
V
9V
GE
100
CE
8V
3
7V
CE
= 6V
[V]
4
[V]
C
[
o
C
]
125
4
5
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
160
120
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
40A
= 20V
I
C
Collector-Emitter Voltage, V
o
2
o
C
1
o
= 20A
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
10V
12V
15V
20V
4
2
8
90A
6
9V
3
12
Common Emitter
T
8V
8
C
GE
GE
V
= 25
7V
GE
CE
[V]
[V]
= 6V
o
4
[V]
16
C
10
GE
www.fairchildsemi.com
12
5
20