FDMS86520 Fairchild Semiconductor, FDMS86520 Datasheet - Page 3

• Manufacturer Part Number: FDMS86520
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS86520 Rev. C
Typical Characteristics
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
80
60
40
20
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
0
2
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
vs Junction Temperature
= 14 A
= 5 V
V
= 10 V
3
DS
T
V
1
-25
, DRAIN TO SOURCE VOLTAGE (V)
J
GS
On-Region Characteristics
,
V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
= 7 V
4
GS
0
T
V
= 8 V
J
2
GS
= 150
25
μ
= 10 V
s
5
o
C
50
T
J
3
= 25 °C unless otherwise noted
75
6
T
μ
J
s
= -55
T
J
o
100 125 150
C )
= 25
V
V
4
GS
o
GS
V
C
7
GS
o
= 6.5 V
= 5.5 V
C
= 6 V
8
5
3
0.001
0.01
100
0.1
40
30
20
10
10
6
5
4
3
2
1
0
Figure 2.
Figure 4.
0
1
Forward Voltage vs Source Current
0.0
0
vs Drain Current and Gate Voltage
5
Figure 6.
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
= 5.5 V
GS
V
SD
0.2
= 0 V
T
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
6
J
On-Resistance vs Gate to
GS
= 150
20
I
Source Voltage
I
D
D
Source to Drain Diode
,
,
= 14 A
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
V
0.4
o
GS
C
= 6 V
7
T
J
μ
0.6
40
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 125
s
T
o
J
V
8
C
= 25
GS
0.8
T
= 6.5 V
V
J
o
T
GS
= -55
C
J
60
= 25
= 7 V
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V
V
9
1.0
o
GS
GS
C
o
C
= 8 V
= 10 V
μ
s
1.2
80
10