FDMS86520 Fairchild Semiconductor, FDMS86520 Datasheet - Page 4

• Manufacturer Part Number: FDMS86520
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS86520 Rev. C
Typical Characteristics
0.01
100
100
0.1
10
10
10
0.001
Figure 7.
1
1
0.01
8
6
4
2
0
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11.
I
D
= 14 A
5
0.01
V
Switching Capability
DS
0.1
Gate Charge Characteristics
t
, DRAIN to SOURCE VOLTAGE (V)
AV
SINGLE PULSE
T
R
T
Operating Area
Unclamped Inductive
J
A
θ
, TIME IN AVALANCHE (ms)
JA
Q
= MAX RATED
DS(on)
= 25
g
10
= 125
, GATE CHARGE (nC)
Forward Bias Safe
o
0.1
C
V
DD
o
1
C/W
15
= 20 V
T
J
= 25
T
T
V
J
1
J
DD
= 125
o
= 25 °C unless otherwise noted
C
= 30 V
20
10
T
o
J
C
= 100
10
V
DD
25
o
C
1 ms
10 ms
100 ms
1 s
10 s
DC
100
100 300
= 40 V
μ
s
100
30
4
10000
1000
2000
1000
100
100
Figure 10.
0.5
80
60
40
20
10
10
0
1
1
10
0.1
25
Figure 12. Single Pulse Maximum
-4
f = 1 MHz
V
Figure 8.
Limited by Package
GS
Current vs Case Temperature
V
GS
= 0 V
10
= 8 V
-3
V
50
Maximum Continuous Drain
Power Dissipation
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
Capacitance vs Drain
C
10
R
V
,
θ
t, PULSE WIDTH (sec)
GS
CASE TEMPERATURE (
JC
-2
= 10 V
= 1.8
1
75
10
o
-1
C/W
1
100
SINGLE PULSE
R
T
A
θ
10
10
JA
o
= 25
C )
= 125
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125
o
C
C
C
C
100
oss
rss
iss
o
C/W
1000
150
60