FDME905PT Fairchild Semiconductor, FDME905PT Datasheet - Page 3

• Manufacturer Part Number: FDME905PT
• Description: This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2
Typical Characteristics
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
30
20
10
0.0
Figure 3. Normalized On- Resistance
0
Figure 1.
-75
0.0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
GS
I
V
D
-50
GS
-V
= -3 V
vs Junction Temperature
= -8 A
= -4.5 V
V
DS
= -4.5 V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-V
T
-25
= -5 V
J
On-Region Characteristics
GS
,
0.5
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
0.5
0
V
T
GS
J
V
= 150
GS
= -1.8 V
25
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
1.0
= -2.5 V
o
C
50
T
J
T
1.0
= 25 °C unless otherwise noted
J
= -55
75
T
J
= 25
1.5
o
o
100 125 150
C
C )
o
C
μ
s
1.5
2.0
3
0.001
0.01
80
60
40
20
0.1
50
10
0
3
2
1
0
1
1.0
Figure 2.
Figure 4.
0.0
0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
1.5
-V
T
-V
= 0 V
J
0.2
SD
= 150
GS
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
-
, GATE TO SOURCE VOLTAGE (V)
I
Source Voltage
D
Source to Drain Diode
2.0
,
o
DRAIN CURRENT (A)
C
10
0.4
T
J
= 25
V
2.5
GS
V
μ
o
GS
s
C
= -1.8 V
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -3 V
3.0
T
T
J
T
I
J
J
= -55
20
D
0.8
= 125
= 25
= -8 A
3.5
o
V
o
C
o
GS
C
V
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C
GS
= -4.5 V
1.0
4.0
= -2.5 V
μ
s
4.5
30
1.2