FDME905PT Fairchild Semiconductor, FDME905PT Datasheet - Page 4

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FDME905PT

Manufacturer Part Number
FDME905PT
Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2
Typical Characteristics
0.001
0.01
100
0.1
10
4.5
3.0
1.5
0.0
1
Figure 7.
0.001
0.1
0.01
0
0.1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25 o C
2
1
10
I
θ
D
JA = 175
Figure 9.
-4
= -8 A
-V
DUTY CYCLE-DESCENDING ORDER
DS
D = 0.5
, DRAIN to SOURCE VOLTAGE (V)
Gate Charge Characteristics
o C/W
Operating Area
4
DS(on)
0.2
0.1
0.05
0.02
0.01
Q
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
Forward Bias Safe
g
, GATE CHARGE (nC)
10
1
-3
8
V
V
T
DD
DD
J
= 25 °C unless otherwise noted
= -5 V
= -7 V
V
10
DD
12
-2
10
= -6 V
SINGLE PULSE
R
θ
JA
100
1 ms
10 ms
100 ms
10 s
1 s
DC
= 175
t, RECTANGULAR PULSE DURATION (sec)
μ
s
30
o
16
C/W
10
-1
4
300
100
3000
1000
0.5
10
100
10
1
1
0.1
-4
Figure 10.
f = 1 MHz
V
Figure 8.
GS
10
= 0 V
-3
-V
DS
Power Dissipation
to Source Voltage
NOTES:
DUTY FACTOR: D = t
PEAK T
10
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Single Pulse Maximum
Capacitance vs Drain
-2
10
J
10
= P
-1
DM
1
C
C
C
x Z
oss
iss
rss
P
1
θJA
DM
1
/t
x R
2
100
θJA
SINGLE PULSE
R
T
10
A
θ
t
JA
1
= 25
+ T
t
2
= 175
A
www.fairchildsemi.com
o
100
C
o
10
C/W
1000
1000
20

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