FDMC86520L Fairchild Semiconductor, FDMC86520L Datasheet - Page 3

• Manufacturer Part Number: FDMC86520L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMC86520L Rev.C
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
60
50
40
30
20
10
0
Figure 3. Normalized On Resistance
0
Figure 1.
-75
1.5
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
= 5 V
vs Junction Temperature
= 13.5 A
V
= 10 V
0.5
DS
2.0
T
V
-25
J
GS
,
,
On Region Characteristics
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
, GATE TO SOURCE VOLTAGE (V)
V
GS
GS
GS
T
J
= 10 V
= 4.5 V
0
= 4 V
= 150
1.0
2.5
25
μ
o
s
C
50
T
1.5
3.0
J
= 25 °C unless otherwise noted
T
75
J
μ
s
T
= -55
J
= 25
o
100 125 150
C )
2.0
V
3.5
o
C
GS
V
o
C
GS
= 3.5 V
= 3 V
2.5
4.0
3
0.001
0.01
100
0.1
10
40
30
20
10
1
4
3
2
1
0
0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
GS
V
V
GS
0.2
SD
10
= 0 V
T
, BODY DIODE FORWARD VOLTAGE (V)
= 3 V
Normalized On-Resistance
V
J
On-Resistance vs Gate to
GS
= 150
I
Source Voltage
D
4
Source to Drain Diode
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
,
,
I
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
D
0.4
= 13.5 A
20
o
C
V
GS
= 3.5 V
0.6
30
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
T
GS
J
J
= 125
= 25
= 4 V
T
J
0.8
40
μ
= -55
o
o
s
C
T
C
J
V
= 25
8
o
GS
C
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V
1.0
= 4.5 V
GS
50
o
C
= 10 V
μ
s
1.2
60
10