FDMC86520L Fairchild Semiconductor, FDMC86520L Datasheet - Page 4

• Manufacturer Part Number: FDMC86520L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMC86520L Rev.C
Typical Characteristics
0.01
100
0.1
50
10
10
10
Figure 7.
1
1
0.01
0.01
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
Figure 11. Forward Bias Safe
D
= 13.5 A
V
Switching Capability
10
DS
0.1
Gate Charge Characteristics
SINGLE PULSE
T
R
T
t
0.1
AV
J
A
, DRAIN to SOURCE VOLTAGE (V)
θ
Operating Area
JA
= MAX RATED
= 25
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
= 125
g
, GATE CHARGE (nC)
o
V
C
DD
20
o
T
C/W
= 20 V
J
1
= 25
T
1
J
= 125
V
o
C
DD
T
T
30
J
= 30 V
J
= 25 °C unless otherwise noted
= 100
o
C
10
o
10
V
C
DD
40
= 40 V
100 us
100 ms
1 s
10 s
100 300
1 ms
10 ms
DC
100
50
4
10000
2000
1000
1000
100
0.5
100
10
60
50
40
30
20
10
10
Figure 10.
1
0
10
1
0.1
25
Figure 12.
-4
Limited by package
Figure 8.
Current vs Case Temperature
f = 1 MHz
V
GS
V
10
GS
= 0 V
-3
V
= 4.5 V
50
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
10
Single Pulse Maximum
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
-2
1
75
10
V
-1
GS
R
θ
= 10 V
JC
= 3.1
1
100
o
C/W
SINGLE PULSE
R
T
10
A
θ
10
o
JA
= 25
C )
= 125
125
www.fairchildsemi.com
o
C
100
o
C/W
C
C
C
rss
oss
iss
1000
150
60