FDMS8888 Fairchild Semiconductor, FDMS8888 Datasheet - Page 3

• Manufacturer Part Number: FDMS8888
• Description: The FDMS8888 has been designed to minimixe losses in power conversion application
• Manufacturer: Fairchild Semiconductor

FDMS8888 Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
Figure 3. Normalized On Resistance
0
0
0.0
Figure 1.
-75
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
DS
I
V
D
-50
GS
vs Junction Temperature
= 5 V
= 13.5 A
0.5
= 10 V
V
V
T
1
DS
-25
GS
J
On Region Characteristics
,
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
GS
GS
GS
1.0
0
= 4.5 V
= 10 V
= 6 V
T
J
2
= 150
25
1.5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
o
C
50
T
J
3
V
V
= 25 °C unless otherwise noted
GS
GS
2.0
75
T
= 3.5 V
= 3 V
J
= -55
T
J
o
100 125 150
= 25
C )
4
2.5
o
C
o
C
3.0
5
3
1E-3
0.01
100
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
40
30
20
10
1
0
0.0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
V
V
= 175
0.2
GS
SD
GS
= 0 V
, BODY DIODE FORWARD VOLTAGE (V)
= 3 V
V
= 3.5 V
Normalized On-Resistance
On-Resistance vs Gate to
GS
o
20
I
Source Voltage
4
D
C
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
I
DRAIN CURRENT (A)
D
0.4
= 13.5 A
V
V
GS
GS
0.6
40
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 4.5 V
= 10 V
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0.8
T
T
J
J
T
= 25
= 150
J
= -55
V
60
8
GS
T
o
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J
C
o
= 6 V
1.0
= 25
C
o
C
o
C
1.2
10
80