FDMS8888 Fairchild Semiconductor, FDMS8888 Datasheet - Page 4

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FDMS8888

Manufacturer Part Number
FDMS8888
Description
The FDMS8888 has been designed to minimixe losses in power conversion application
Manufacturer
Fairchild Semiconductor
Datasheet

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FDMS8888 Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
0.01
20
10
100
10
0.1
1
Figure 7.
0.01
10
8
6
4
2
0
1
0.01
0
Figure 9.
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
I
D
= 13.5 A
Switching Capability
V
5
Gate Charge Characteristics
DS
0.1
t
AV
V
0.1
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
DD
Unclamped Inductive
, TIME IN AVALANCHE (ms)
Q
SINGLE PULSE
T
R
T
= 10 V
g
J
A
DS(on)
, GATE CHARGE (nC)
JA
= MAX RATED
T
= 25
V
J
DD
= 125
10
= 125
= 15 V
o
C
o
1
o
C/W
1
C
T
J
T
V
= 100
15
DD
J
T
= 25 °C unless otherwise noted
J
= 20 V
= 25
o
C
10
o
10
C
20
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
100
100
25
4
500
2000
1000
10
60
50
40
30
20
10
0.2
10
100
0
Figure 10.
1
10
25
2
0.1
Figure 12.
-3
Limited by Package
Figure 8.
Current vs Case Temperature
V
f = 1 MHz
GS
10
= 0 V
50
V
-2
V
GS
Maximum Continuous Drain
Power Dissipation
DS
T
to Source Voltage
C
= 10 V
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
10
V
V
-1
GS
GS
75
= 10 V
= 4.5 V
1
1
R
JC
100
= 3.3
SINGLE PULSE
R
T
10
o
A
C/W
JA
= 25
o
C )
= 125
125
o
C
100
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10
o
C/W
C
C
C
oss
iss
rss
1000
150
30

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