FDD5N50U Fairchild Semiconductor, FDD5N50U Datasheet

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FDD5N50U

Manufacturer Part Number
FDD5N50U
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DOMS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDD5N50U
Manufacturer:
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20 000
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FDD5N50UTM
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©2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD5N50U
N-Channel MOSFET, FRFET
500V, 3A, 2.0Ω
Features
• R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.65Ω ( Typ.)@ V
( Typ. 5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
= 10V, I
D
= 1.5A
D-PAK
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
D
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
Ultra FRFET
S
D
500
±30
275
300
110
1.8
4.5
0.3
1.4
12
40
3
3
4
December 2007
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
tm
C
C
o
C
TM

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FDD5N50U Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD5N50U Rev. A Description = 1.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 3A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD5N50U Rev unless otherwise noted C Package Reel Size D-PAK 380mm D-PAK 380mm ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 800 600 400 200 0 0 Drain-Source Voltage [V] DS FDD5N50U Rev. A Figure 2. Transfer Characteristics 10 1 *Notes: 1. 250 µ s Pulse Test 0 Figure 4. Body Diode Forward Voltage ...

Page 4

... Figure 9. Maximum Drain Current vs. Case Temperature 3 Case Temperature C Figure 10. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDD5N50U Rev. A (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes 250 µ 0.01 75 125 175 100 125 150 o ...

Page 5

... FDD5N50U Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDD5N50U Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + ...

Page 7

... Mechanical Dimensions FDD5N50U Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD5N50U Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource Power247 Green FPS™ POWEREDGE Green FPS™ e-Series™ ...

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