FDD5N50U Fairchild Semiconductor, FDD5N50U Datasheet - Page 4
FDD5N50U
Manufacturer Part Number
FDD5N50U
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DOMS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD5N50U.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD5N50U
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD5N50U Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
3.5
3
2
1
0
-75
25
vs. Temperature
-25
vs. Case Temperature
50
T
T
J
C
, Junction Temperature
, Case Temperature
0.005
0.01
25
0.1
75
1
3
Figure 10. Transient Thermal Response Curve
10
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
100
75
[
o
10
*Notes:
C
[
1. V
2. I
]
-4
o
125
125
C
D
GS
]
= 250
= 0V
µ
A
Rectangular Pulse Duration [sec]
175
150
10
-3
(Continued)
10
-2
4
0.01
0.1
Figure 8. Maximum Safe Operating Area
10
20
1
1
10
Operation in This Area
is Limited by R
*Notes:
-1
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
V
- T
(t) = 1.4
DS
C
, Drain-Source Voltage [V]
= P
10
10
t
1
DS(on)
t
o
DM
0
2
C/W Max.
* Z
1
θ
/t
JC
2
(t)
*Notes:
1. T
2. T
3. Single Pulse
10
100
1
C
J
= 150
= 25
10ms
100
o
1ms
DC
o
C
C
µ
s
www.fairchildsemi.com
40
µ
1000
s