FDD3N40 Fairchild Semiconductor, FDD3N40 Datasheet - Page 2
FDD3N40
Manufacturer Part Number
FDD3N40
Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDU3N40.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD3N40TM
Manufacturer:
KDS
Quantity:
6 123
Part Number:
FDD3N40TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD3N40 / FDU3N40 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 20mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
≤ 2A, di/dt ≤ 200A/µs, V
DSS
FDD3N40
FDD3N40
FDU3N40
J
AS
= 2A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
Parameter
FDD3N40TM
FDU3N40TU
FDD3N40TF
G
DSS
Device
= 25Ω, Starting T
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25°C unless otherwise noted
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 400V, V
= 320V, T
= V
= 40V, I
= 25V, V
= 320V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 200V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 2A
= 3A
= 250µA
DS
GS
D
D
DS
= 1A
GS
C
= 1A
= 250µA
= 3A
= 3A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
380mm
380mm
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
16mm
16mm
Min.
400
-
3.0
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Typ.
0.75
173
210
0.4
2.8
3.7
4.5
1.2
30
30
10
10
25
--
--
--
--
--
--
2
2
--
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--
Quantity
Max Units
-100
100
225
www.fairchildsemi.com
5.0
3.4
1.4
10
40
30
70
30
60
--
--
1
--
6
6
--
--
2
8
--
--
2500
2000
70
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V