FQN1N60C Fairchild Semiconductor, FQN1N60C Datasheet - Page 2
FQN1N60C
Manufacturer Part Number
FQN1N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?s proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQN1N60C.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQN1N60CTA
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FQN1N60CTA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FQN1N60C Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
6. a) Reference point of the R
Off Characteristics
BV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
d(on)
d(off)
DSS
GSSF
GSSR
r
f
S
SM
rr
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
FS
BV
T
GS(th)
DS(on)
iss
oss
rss
SD
SD
g
gs
gd
rr
Device Marking
J
DSS
Symbol
(R
DSS
0.3A, di/dt
JA
1N60C
/
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
AS
= 1.1A, V
200A/ s, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
300 s, Duty cycle
= 50V, R
JL
DD
is the drain lead
FQN1N60C
BV
G
Device
DSS,
Parameter
= 25
Starting T
Starting T
2%
J
T
= 25°C
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-92
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
= 25
/ dt = 100 A/ s
= 0 V, I
= 600 V, V
= 480 V, T
= 30 V, V
= -30 V, V
= V
= 10 V, I
= 40 V, I
= 25 V, V
= 300 V, I
= 480 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
2
Test Conditions
, I
CA
D
S
S
D
D
D
= 250 A
= 0.3 A
= 1.1 A,
GS
is determined by the user’s board design)
DS
D
D
= 250 A
DS
= 0.3 A
GS
C
= 0.15 A
= 1.1 A,
= 1.1 A,
Reel Size
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
--
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
600
2.0
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Typ.
0.75
0.53
130
190
0.6
9.3
3.5
4.8
0.7
2.7
19
21
13
27
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7
Max.
-100
11.5
250
100
170
4.0
6.2
0.3
1.2
1.4
50
25
24
52
36
64
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6
Quantity
www.fairchildsemi.com
2000ea
Units
V/°C
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A