FQN1N60C Fairchild Semiconductor, FQN1N60C Datasheet - Page 4
FQN1N60C
Manufacturer Part Number
FQN1N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?s proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQN1N60C.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQN1N60CTA
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FQN1N60CTA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FQN1N60C Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
0
10
0
-50
vs. Temperature
V
T
J
DS
Operation in This Area
is Limited by R
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
1
DC
1 0
1 0
1 0
1 0
-1
1 0
2
1
0
DS(on)
-5
50
D = 0 .5
※
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
1. T
2. T
3. Single Pulse
Notes :
C
J
100 ms
= 150
Figure 11. Transient Thermal Response Curve
= 25
1 0
100
o
C
10
o
C
-4
10 ms
o
2
C]
※
1. V
2. I
1 ms
Notes :
t
D
GS
1
= 250 µA
1 0
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
150
= 0 V
100 s
-3
200
10
s in g le p u ls e
1 0
3
-2
(Continued)
4
1 0
-1
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
0
0.3
0.2
0.1
0.0
※
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
-100
1 . Z
2 . D u ty F a c to r, D = t
3 . T
N o te s :
θ J L
J M
1 0
(t) = 5 0
- T
1
vs. Case Temperature
L
= P
-50
50
℃
D M
vs. Temperature
/W M a x .
* Z
1 0
T
1
T
θ J L
J
/t
, Junction Temperature [
2
C
2
, Case Temperature [ ]
( t)
0
75
1 0
50
3
100
100
℃
o
C]
※
125
1. V
2. I
150
Notes :
D
www.fairchildsemi.com
GS
= 0.15 A
= 10 V
200
150