IPP65R190E6 Infineon Technologies, IPP65R190E6 Datasheet
IPP65R190E6
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IPP65R190E6 Summary of contents
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Metal Oxide Semiconductor Field Effect Transistor 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Rev. 2.0, 2011-05-13 Final ...
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... PG-TO220 IPA65R190E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Final Data Sheet *Q and E dson g oss Unit V µJ A/µs Marking 65E6190 2 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 drain pin 2 gate pin 1 source pin 3 Related Links IFX CoolMOS Webpage IFX Design tools Rev. 2.0, 2011-05-13 ...
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Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximum ratings °C, unless otherwise specified. j Table 2 Maximum ratings Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source ...
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Thermal characteristics Table 3 Thermal characteristics non FullPAK Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Thermal characteristics FullPAK Parameter Thermal resistance, junction - case Thermal resistance, ...
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Electrical characteristics T Electrical characteristics, at j=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Table 7 Dynamic characteristics ...
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Table 8 Gate charge characteristics Parameter Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 9 Reverse diode characteristics Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Final ...
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Electrical characteristics diagrams Table 10 Power dissipation Non FullPAK tot C Table 11 Max. transient thermal impedance Non FullPAK Z =f(tp); parameter: D=t /T (thJC) p Final Data Sheet 650V CoolMOS™ E6 Power Transistor ...
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Table 12 T Safe operating area =25 °C C Non FullPAK I T =f(V ); =25 °C; V > 7V; D=0; parameter Table 13 T Safe operating area =80 °C C Non FullPAK I T ...
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Table 14 Typ. output characteristics =25 °C; parameter Table 15 Typ. drain-source on-state resistance R =f =125 °C; parameter: V DS(on Final Data Sheet 650V CoolMOS™ E6 ...
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Table 16 Typ. transfer characteristics I =f =20V Table 17 Avalanche energy Final Data Sheet 650V CoolMOS™ E6 Power Transistor Electrical characteristics ...
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Table 18 Typ. capacitances C=f f=1 MHz DS GS Table 19 Forward characteristics of reverse diode I =f(V ); parameter Final Data Sheet 650V CoolMOS™ E6 Power Transistor Electrical characteristics diagrams C ...
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Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit I ...
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Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 650V CoolMOS™ E6 Power Transistor 14 IPx65R190E6 Package outlines Rev. 2.0, 2011-05-13 ...
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Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 650V CoolMOS™ E6 Power Transistor 15 IPx65R190E6 Package outlines Rev. 2.0, 2011-05-13 ...
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Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 650V CoolMOS™ E6 Power Transistor 16 IPx65R190E6 Package outlines Rev. 2.0, 2011-05-13 ...
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Figure 4 Outlines TO-262, dimensions in mm/inches Final Data Sheet 650V CoolMOS™ E6 Power Transistor 17 IPx65R190E6 Package outlines Rev. 2.0, 2011-05-13 ...
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Figure 5 Outlines TO-263, dimensions in mm/inches Final Data Sheet 650V CoolMOS™ E6 Power Transistor 18 IPx65R190E6 Package outlines Rev. 2.0, 2011-05-13 ...
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... The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...