IPP65R190E6 Infineon Technologies, IPP65R190E6 Datasheet - Page 2

• Manufacturer Part Number: IPP65R190E6
• Manufacturer: Infineon Technologies

Specifications of IPP65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

650V CoolMOS™ E6 Power Transistor
1
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1
1) J-STD20 and JESD22
Final Data Sheet
Parameter
V
R
Q
I
E
Body diode d
Type / Ordering Code
IPW65R190E6
IPB65R190E6
IPI65R190E6
IPP65R190E6
IPA65R190E6
D,pulse
DS
oss
DS(on),max
g,typ
Extremely low losses due to very low FOM R
Very high commutation ruggedness
Easy to use/drive
JEDEC
@
@ 400V
T
j,max
1)
Description
qualified, Pb-free plating, Halogen free
Key Performance Parameters
i
/d
t
Value
700
0.19
73
66
5.9
500
Package
PG-TO247
PG-TO263
PG-TO262
PG-TO220
PG-TO220 FullPAK
Unit
V

nC
A
µJ
A/µs
dson
*Q
g
2
and E
oss
65E6190
Marking
IPA65R190E6, IPB65R190E6
IPI65R190E6, IPP65R190E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
gate
pin 1
Rev. 2.0, 2011-05-13
IPW65R190E6
drain
pin 2
source
pin 3