BSP170P Infineon Technologies, BSP170P Datasheet - Page 6

• Manufacturer Part Number: BSP170P
• Manufacturer: Infineon Technologies

Specifications of BSP170P

• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -

Rev 2.52
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
600
550
500
450
400
350
300
250
200
150
100
10
10
10
50
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1.9 A; V
5
20
98 %
10
GS
-V
T
=-10 V
j
DS
Ciss
[°C]
Coss
Crss
60
typ.
[V]
15
100
20
140
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
150 °C, 98%
j
); V
j
GS
0.5
-20
=V
25 °C, typ
DS
25 °C, 98%
; I
1
20
D
=-250 µA
-V
min.
T
j
SD
1.5
typ.
[°C]
60
[V]
max.
2
100
150 °C, typ
BSP170P
2.5
140
2008-03-26
3