BSP170P Infineon Technologies, BSP170P Datasheet - Page 7

• Manufacturer Part Number: BSP170P
• Manufacturer: Infineon Technologies

Specifications of BSP170P

• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -

Rev 2.52
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
70
65
60
55
50
AV
-1
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
1
20
T
t
AV
j
10
[°C]
[µs]
2
60
125 °C
100 °C
100
10
3
25 °C
140
10
page 7
4
14 Typ. gate charge
V
parameter: V
GS
=f(Q
16
14
12
10
8
6
4
2
0
0
gate
); I
DD
D
=-1.9 A pulsed
5
Q
12 V
gate
[nC]
30 V
10
48 V
BSP170P
2008-03-26
15