BFR840L3RHESD Infineon Technologies, BFR840L3RHESD Datasheet - Page 7

• Manufacturer Part Number: BFR840L3RHESD
• Manufacturer: Infineon Technologies

Specifications of BFR840L3RHESD

• Packages: TSLP-3-9
• Vceo (max): 2.25 V
• Ic(max): 35.0 mA
• Nfmin (typ): -
• Gmax (typ): -
• Oip3: -

BFR840L3RHESD
Product Brief
1
Product Brief
The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for
5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise
match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable battery-
powered applications in which energy efficiency is a key requirement. The device comes in a very small thin
leadless package, ideal for modules.
Data Sheet
7
Revision 1.0, 2012-04-19