BFP640FESD Infineon Technologies, BFP640FESD Datasheet - Page 7

• Manufacturer Part Number: BFP640FESD
• Manufacturer: Infineon Technologies

Specifications of BFP640FESD

• Packages: TSFP-4-1
• Vceo (max): 4.1 V
• Ic(max): 50.0 mA
• Nfmin (typ): 0.65 dB
• Gmax (typ): 27.0 dB
• Oip3: 26.0 dBm

Robust High Performance Low Noise Bipolar RF Transistor
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Applications
As Low Noise Amplifier (LNA) in
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As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP640FESD
Data Sheet
Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise figure typical at 1.5 GHz,
0.65 dB at 2.4 GHz, 6 mA
28.5 dB maximum gain
25 dB at 2.4 GHz, 30 mA
26 dBm
Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5GHz, UWB,
Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
OIP
Features
3
TSFP-4-1
typical at 2.4 GHz, 30 mA
G
ms
typical at 1.5 GHz,
1 = B
2 = E
Pin Configuration
7
3 = C
4 = E
4
3
Revision 1.1, 2010-06-29
BFP640FESD
Marking
T4s
1
2