BFP640FESD Infineon Technologies, BFP640FESD Datasheet - Page 8

• Manufacturer Part Number: BFP640FESD
• Manufacturer: Infineon Technologies

Specifications of BFP640FESD

• Packages: TSFP-4-1
• Vceo (max): 4.1 V
• Ic(max): 50.0 mA
• Nfmin (typ): 0.65 dB
• Gmax (typ): 27.0 dB
• Oip3: 26.0 dBm

2
The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal
protection circuits, which enhance robustness against ESD and high RF input power strongly. The device
combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide
range of wireless applications.
The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Table 1
Parameter
Collector emitter breakdown voltage
Collector base leakage current
DC current gain
Collector current
Total power dissipation
Data Sheet
Product Brief
Quick Reference DC Characteristics at
Symbol
V
I
h
I
P
CBO
C
FE
(BR)CEO
tot
Min.
4.1
–
110
–
–
T
8
A
= 25°C
Typ.
4.7
–
180
–
–
Values
Max.
–
500
270
50
200
Unit
V
nA
mA
mW
Note / Test Condition
I
V
Open emitter
V
T
Revision 1.1, 2010-06-29
C
S
CB
CE
= 1 mA,
≤ 90 °C
= 2 V,
= 3 V,
BFP640FESD
I
I
Product Brief
I
E
C
B
= 0
= 30 mA
= 0