HY27SS08561M Hynix Semiconductor, HY27SS08561M Datasheet - Page 17

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HY27SS08561M

Manufacturer Part Number
HY27SS08561M
Description
256mbit 32mx8bit / 16mx16bit Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Page Program
The Page Program operation is the standard operation to program data to the memory array. The main area of the
memory array is programmed by page, however partial page programming is allowed where any number of bytes (1 to
528) or words (1 to 264) can be programmed.
The max number of consecutive partial page program operations allowed in the same page is one in the main area and
two in the spare area. After exceeding this a Block Erase command must be issued before any further program opera-
tions can take place in that page.
Before starting a Page Program operation a Pointer operation can be performed to point to the area to be pro-
grammed. Refer to the Pointer Operations section and Figure 9 for details.
Each Page Program operation consists of five steps (see Figure 14):
1. one bus cycle is required to setup the Page Program command.
2. three bus cycles are then required to input the program address (refer to Table 3 and Table 4).
3. the data is then input (up to 528 Bytes/ 264 Words) and loaded into the Page Buffer.
4. one bus cycle is required to issue the confirm command to start the Program/ Erase/Read Controller.
5. The Program/ Erase/Read Controller then programs the data into the array.
Once the program operation has started the Status Register can be read using the Read Status Register command.
During program operations the Status Register will only flag errors for bits set to '1' that have not been successfully
programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be accepted, all other com-
mands will be ignored.
Once the program operation has completed the Program/ Erase/Read Controller bit SR6 is set to '1' and the Ready/
Busy signal goes High.
The device remains in Read Status Register mode until another valid command is written to the Command Interface.
tBLBH2
(Program Busy time)
RB
Busy
I/O
80h
Address Inputs
Data Input
10h
70h
SR0
Page Program
Confirm
Read Status Register
Setup Code
Code
Figure 14. Page Program Operation
Note: Before starting a Page Program operation a Pointer operation can be performed. Refer to Pointer section for details.
Rev 0.7 / Oct. 2004
17

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