HY27SS08561M Hynix Semiconductor, HY27SS08561M Datasheet - Page 29

• Manufacturer Part Number: HY27SS08561M
• Description: 256mbit 32mx8bit / 16mx16bit Nand Flash
• Manufacturer: Hynix Semiconductor

Table 15: AC Characteristics for Operation (3.3V Device and 1.8V Device)
Rev 0.7 / Oct. 2004
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ALLRL1
ALLRL2
BHRL
BLBH1
BLBH2
BLBH3
BLBH4
CLLRL
DZRL
EHBH
EHEL
EHQZ
ELQV
RHBL
RHRL
RHQZ
RLRH
RLRL
Sym-
Alt.
bol
Sym-
t
t
t
t
t
t
PROG
t
t
t
t
t
t
t
t
t
bol
BERS
t
t
CEH
CHZ
AR1
AR2
RST
CLR
CRY
CEA
RB
REH
RHZ
RP
RC
t
RR
IR
R
Address Latch Low to Read En-
able Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to Ready/
Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Ready/Busy High (CE intercepted read)
Chip Enable High to Chip Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to Ready/Busy
Low
Read Enable High to Read
Enable Low
Read Enable High to Output Hi-Z
Read Enable Low to Read Enable
High
Read Enable Low to Read Enable
Low
Parameter
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Read Electronic Signature
Read cycle
Read Busy time, 128Mb,
256Mb
Program Busy time
Erase Busy time
Reset Busy time, during
ready
Reset Busy time, during read
Reset Busy time, during pro-
gram
Reset Busy time, during
erase
Read Enable High Hold time
Read Cycle time
(2)
Read Enable Pulse Width
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Device
3.3V
50
60+tr
500
100
100
500
10
50
20
10
10
10
20
45
15
15
30
30
3
5
5
0
(1)
Device
1.8V
60
Unit
ms
ns
ns
ns
us
us
us
us
us
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
29