HY27SS08561M Hynix Semiconductor, HY27SS08561M Datasheet - Page 43

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HY27SS08561M

Manufacturer Part Number
HY27SS08561M
Description
256mbit 32mx8bit / 16mx16bit Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
MARKING INFORMATION -
Rev 0.7 / Oct. 2004
- hynix
- KOR
- HY27xSxx121mTxB
- Y: Year (ex: 4=year 2004, 05= year 2005)
- ww: Work Week (ex: 12= work week 12)
- xx: Process Code
Note
- Capital Letter
- Small Letter
HY: HYNIX
27: NAND Flash
x: Power Supply
S: Classification
xx: Bit Organization
56: Density
1: Mode
M: Version
x: Package Type
x: Package Material
x: Operating Temperature
x: Bad Block
Packag
TSOP1
WSOP
/
H
x
Y
x
TSOP1/WSOP
2
x
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
: Hynix Symbol
: Origin Country
: Part Number
: U(2.7V~3.6V), S(1.7V~2.2V)
: Single Level Cell+Single Die
: 08(x8), 16(x16)
: 256Mb
: 1nCE & 1R/nB; CE don't care
: 1st Generation
: T(TSOP1), V(WSOP)
: Blank(Normal), P(Lead Free)
: C(0℃~70℃), E(-25℃~85℃)
: B(Included Bad Block), S(1~5 Bad Block),
: Fixed Item
: Non-fixed Item
7
x
I(-40℃~85℃)
P(All Good Block)
Marking Example
x
S
x
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
Y
x
W
5
W
K
6
O
1
x
M
R
x
43

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