NDB5060 Fairchild Semiconductor, NDB5060 Datasheet - Page 4

• Manufacturer Part Number: NDB5060
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
40
32
24
16
8
0
Figure 5. Transfer Characteristics
50
40
30
20
10
2
1.75
1.25
0.75
0
Figure 1. On-Region Characteristics.
1.5
0.5
Figure 3. On-Resistance Variation
0
2
1
V
-50
DS
V
I
D
= 10V
GS
= 13A
with Temperature
-25
= 10V
V
1
GS
4
V
0
GS
= 20V
V
DS
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
25
2
12
50
6
.
10
75
T = -55°C
9.0
J
3
.
100
8.0
8
25°C
125
7.0
4
125°C
6.0
150
5.0
175
10
5
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
1
Figure 6. Gate Threshold Variation with
2
1
2
1
-50
Figure 2. On-Resistance Variation with Gate
Figure 4. On-Resistance Variation with Drain
0
0
V
GS
Temperature
-25
V
Voltage and Drain Current.
=10 V
Current and Temperature
GS
T = 125°C
J
= 6.0 V
10
10
0
T , JUNCTION TEMPERATURE (°C)
J
25
I
I
D
.
D
7.0
, DRAIN CURRENT (A)
20
, DRAIN CURRENT (A)
20
50
25°C
8.0
75
9.0
30
30
.
100
10
-55°C
I
12
D
V
125
DS
40
= 250µA
40
= V
20
GS
150
NDP5060 Rev.A
50
175
50