NDB5060 Fairchild Semiconductor, NDB5060 Datasheet - Page 5

• Manufacturer Part Number: NDB5060
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
Figure 11. Switching Test Circuit
V
Figure 9. Capacitance Characteristics
Figure 7. Breakdown Voltage Variation with
1500
1000
GS
500
200
100
1.15
1.05
0.95
1.2
1.1
0.9
40
1
-50
1
Temperature
I
D
R
-25
= 250µA
f = 1 MHz
V
GS
GEN
2
= 0V
0
V
3
DS
T
J
V
.
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
25
IN
G
5
50
D
S
V
75
10
DD
.
R
100
L
.
20
DUT
C oss
(continued)
C rss
125
C iss
150
V
40
O U T
175
60
0.0001
V
0.001
t
V
O U T
0.01
d(on)
20
16
12
Figure 10. Gate Charge Characteristics
0.1
IN
20
10
8
4
0
3
1
Figure 12. Switching Waveforms
0
1 0 %
0
Figure 8. Body Diode Forward Voltage
V
I
D
GS
= 26A
= 0V
Variation with Current and Temperature
t
5 0 %
o n
0.3
8
1 0 %
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
t
J
9 0 %
PULSE WIDTH
r
Q
0.6
g
16
25°C
, GATE CHARGE (nC)
t
-55°C
d(off)
0.9
24
5 0 %
V
DS
.
9 0 %
= 12V
t
1 0 %
o f f
1.2
9 0 %
24V
.
32
48V
INVERTED
t
NDP5060 Rev.A
f
1.5
.
40