NDB510A Fairchild Semiconductor, NDB510A Datasheet
NDB510A
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NDB510A Summary of contents
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... NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially ...
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... ALL 250 1 ALL 100 ALL -100 ALL 1.4 2.3 3.6 NDP510A 0.088 0.12 NDP510AE NDB510A NDB510AE 0.16 0.24 NDP510B 0.15 NDP510BE NDB510B 0.3 NDB510BE NDP510A 15 NDP510AE NDB510A NDB510AE NDP510B 13 NDP510BE NDB510B NDB510BE ALL 6 8.6 ALL 740 900 ALL 160 180 ALL 40 50 NDP510.SAM Units µ ...
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... I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Notes: 1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 25°C unless otherwise noted) C Conditions (Note ...
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Typical Electrical Characteristics 20V DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 2 1.5 1 0.5 -50 -25 ...
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Typical Electrical Characteristics 1. 250µA D 1.04 1.02 1 0.98 0.96 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature. 1600 1000 500 200 100 ...
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Typical Electrical Characteristics 10V -55° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature. 100 5 0 ...