NDB510A Fairchild Semiconductor, NDB510A Datasheet - Page 2

• Manufacturer Part Number: NDB510A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
E
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
AR
DSS
GSSF
GSSR
D(on)
FS
AS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
f = 1.0 MHz
D
D
D
DD
GS
DS
GS
GS
GS
DS
GS
GS
GS
DS
DS
= 250 µA
= 7.5 A
= 6.5 A
= 100 V,
= V
= 10 V, I
= 25 V, V
= 25 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V,
= 10 V,
= 10 V, V
= 0 V
GS
,
D
D
D
= 250 µA
DS
DS
GS
= 15 A
DS
= 7.5 A
= 0 V
= 10 V
= 0 V,
= 0 V
T
T
T
T
J
J
J
J
= 125°C
= 125°C
= 125°C
= 125°C
NDP510AE
NDP510BE
NDB510AE
NDB510BE
NDP510AE
NDB510AE
NDP510BE
NDB510BE
NDP510AE
NDB510AE
NDP510BE
NDB510BE
NDP510A
NDB510A
NDP510B
NDB510B
NDP510A
NDB510A
NDP510B
NDB510B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
100
1.4
15
13
2
6
0.088
0.16
Typ
740
160
2.3
8.6
40
3
Max
-100
0.12
0.24
0.15
250
100
900
180
3.6
0.3
65
15
50
1
4
NDP510.SAM
Units
pF
pF
pF
mA
mJ
µA
nA
nA
A
V
V
V
A
A
S