BSH299 NXP Semiconductors, BSH299 Datasheet

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BSH299

Manufacturer Part Number
BSH299
Description
P-channel Enhancement Mode Mos Transistor
Manufacturer
NXP Semiconductors
Datasheet
Objective specification
File under Discrete Semiconductors, SC13b
DATA SHEET
BSH299
P-channel enhancement mode
MOS transistor
DISCRETE SEMICONDUCTORS
1998 Feb 18

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BSH299 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 ...

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... Top view MAM396 Fig.1 Simplified outline and symbol. CONDITIONS MIN. open drain Objective specification BSH299 DESCRIPTION drain drain gate source drain drain MAX. UNIT 0 0.7 W ...

Page 3

... note 1 s note see Fig note 3; see Fig.2 amb note 4; see Fig.2 amb (ambient to tie-point) of 27.5 K/W. th a-tp (ambient to tie-point K/W. th a-tp PARAMETER 3 Objective specification BSH299 MIN. MAX. UNIT 0.2 A 0.8 A 0.7 W 0. +150 C ...

Page 4

... MHz see Fig 0 0 Objective specification BSH299 MIN. TYP. MAX. UNIT 100 ...

Page 5

... Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1998 Feb 18 MGL382 1 handbook, halfpage 150 200 Objective specification BSH299 MGL383 pulsed (V) Fig.3 SOAR. MGL384 ( ...

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... I D (mA) 400 C iss 200 C oss C rss ( Fig.8 Output characteristics; typical values. 6 Objective specification BSH299 off Fig.6 Input and output waveforms. MLD197 7 2 ...

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... DSon ( 130 Fig.12 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. 7 Objective specification BSH299 MLD198 2 7 (mA) = 300 MLD194 (1) (2) ...

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... OUTLINE VERSION IEC SOT363 1998 Feb scale 2.2 1.35 2.2 0.45 1.3 0.65 1.8 1.15 2.0 0.15 REFERENCES JEDEC EIAJ SC-88 8 Objective specification BSH299 detail 0.25 0.2 0.2 0.1 0.15 EUROPEAN ISSUE DATE PROJECTION 97-02-28 SOT363 A ...

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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Feb 18 9 Objective specification BSH299 ...

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... Philips Semiconductors P-channel enhancement mode MOS transistor 1998 Feb 18 NOTES 10 Objective specification BSH299 ...

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... Philips Semiconductors P-channel enhancement mode MOS transistor 1998 Feb 18 NOTES 11 Objective specification BSH299 ...

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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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