BSH299 NXP Semiconductors, BSH299 Datasheet - Page 6

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1998 Feb 18
handbook, halfpage
handbook, halfpage
P-channel enhancement mode MOS transistor
V
GS
(pF)
C
= 0; T
Fig.7
80
60
40
20
0
0
10 V
0 V
j
= 25 C; f = 1 MHz.
Fig.5 Switching time test circuit.
Capacitance as a function of
drain-source voltage; typical values.
50
10
20
V DD = 40 V
I D
C oss
C iss
C rss
MLD189
V DS (V)
MLD191
30
6
handbook, halfpage
handbook, halfpage
T
j
= 25 C.
INPUT
OUTPUT
(mA)
I D
600
400
200
Fig.8 Output characteristics; typical values.
0
0
Fig.6 Input and output waveforms.
V GS = 10 V
2
10 %
t on
90 %
4
7.5 V
6
90 %
6 V
Objective specification
8
t off
10
V DS (V)
BSH299
MLD197
4 V
2.5 V
5 V
3 V
MBB690
10 %
12