BSH299 NXP Semiconductors, BSH299 Datasheet - Page 4

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1998 Feb 18
V
V
I
I
R
C
C
C
Switching times (see Figs 5 and 6)
t
t
SYMBOL
j
DSS
GSS
on
off
y
= 25 C unless otherwise specified.
(BR)DSS
GSth
DSon
iss
oss
rss
P-channel enhancement mode MOS transistor
fs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on switching time
turn-off switching time
PARAMETER
V
V
V
V
V
V
V
see Fig.10
V
V
see Fig.7
V
I
V
I
D
D
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
= 0.2 A
= 0.2 A
= 10 V; I
= 25 V; I
= 0; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= V
= 0; V
= 0; V
= 0; V
= 20 V; V
DS
D
CONDITIONS
4
DS
DS
DS
DS
; I
= 10 A
D
= 25 V; f = 1 MHz;
= 40 V
= 50 V
= 50 V; T
D
D
= 1 mA
DS
= 0.13 A;
= 0.13 A
= 0
DD
DD
= 40 V;
= 40 V;
j
= 125 C
50
MIN.
50
0.8
25
15
3.5
3
7
TYP.
Objective specification
10
45
25
12
MAX.
2
100
10
60
10
BSH299
V
V
nA
nA
mS
pF
pF
pF
ns
ns
UNIT
A
A