BSH299 NXP Semiconductors, BSH299 Datasheet - Page 2

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
QUICK REFERENCE DATA
1998 Feb 18
V
V
V
I
R
P
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
D
Low threshold voltage
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL, etc.
Power management
Battery powered applications e.g. cellular phones
General purpose switch.
DS
GSO
GSth
tot
P-channel enhancement mode MOS transistor
DSon
SYMBOL
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CAUTION
PARAMETER
open drain
I
T
I
T
D
D
s
s
2
= 1 mA; V
= 0.13 A; V
= 80 C
= 80 C
PINNING - SOT363
handbook, halfpage
CONDITIONS
PIN
1
2
3
4
5
6
DS
Fig.1 Simplified outline and symbol.
GS
Top view
= V
= 10 V
6
1
GS
SYMBOL
5
2
d
d
g
s
d
d
4
3
0.8
MIN.
MAM396
drain
drain
gate
source
drain
drain
g
Objective specification
10
0.7
DESCRIPTION
50
20
2
0.2
MAX.
d
s
BSH299
V
V
V
A
W
UNIT