BSH299 NXP Semiconductors, BSH299 Datasheet - Page 5

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1998 Feb 18
handbook, halfpage
P-channel enhancement mode MOS transistor
R th j-s
(K/W)
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
P tot
(W)
10
10
10
0.8
0.6
0.4
0.2
10
1
0
3
2
1
1
10
0
6
Fig.2 Power derating curve.
50
t p (s) =
1.00
0.75
0.50
0.33
0.05
0.01
0.00
0.20
0.10
0.02
10
5
100
150
T s (
10
MGL382
o
4
C)
200
10
5
3
handbook, halfpage
10
10
10
(A)
I D
1
1
2
3
10
1
10
2
Fig.3 SOAR.
1
P
10
t p
1
T
Objective specification
10
DC
pulsed
V DS (V)
=
t p (s)
t p
T
t
BSH299
MGL384
MGL383
10
1
2