BSH299 NXP Semiconductors, BSH299 Datasheet - Page 7

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1998 Feb 18
handbook, halfpage
handbook, halfpage
P-channel enhancement mode MOS transistor
Fig.9
Fig.11 Temperature coefficient of gate-source
V
k = (V
I
D
DS
(mA)
= 1 mA; V
I D
k
600
400
200
1.2
1.0
0.8
0.6
= 10 V; T
GSth
0
50
0
Transfer characteristics; typical values.
threshold voltage as a function of junction
temperature; typical values.
at T
DS
j
)/(V
j
= 25 C.
= V
GSth
2
GS
0
.
at 25 C).
4
50
6
100
8
T j ( C)
V GS (V)
MLD195
MLD196
150
10
7
handbook, halfpage
handbook, halfpage
Fig.10 Drain-source on-state resistance as a
Fig.12 Temperature coefficient of drain-source
T
k = (R
(1) I
(2) I
R DSon
j
= 25 C; t
( )
1.8
1.4
1.0
0.6
k
D
D
60
40
20
DSon
0
= 130 mA; V
= 20 mA; V
1
50
function of drain current; typical values.
on-resistance as a function of junction
temperature; typical values.
at T
p
= 300 s;
j
)/(R
DSon
GS
0
GS
= 2.4 V.
at 25 C).
= 10 V.
10
V GS = 2.5 V
= 0.
50
10
3 V
Objective specification
2
100
I D (mA)
4 V
T j ( C)
BSH299
MLD194
5 V
MLD198
7.5 V
(1)
(2)
10 V
10
150
3