RFG60P06E Fairchild Semiconductor, RFG60P06E Datasheet
RFG60P06E
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RFG60P06E Summary of contents
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... Body Model) of ESD. Formerly developmental type TA09836. Ordering Information PART NUMBER PACKAGE RFG60P06E TO-247 NOTE: When ordering use the entire part numberr RFG60P06E. Packaging ©2002 Fairchild Semiconductor Corporation Features • 60A, 60V • r DS(ON) • Temperature Compensating PSPICE • ...
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... DD = 60A 0.8Ω 7200 - 1700 - 325 - - - - MIN TYP - - - - UNITS MAX UNITS - µA -1 µA -50 100 nA Ω 0.030 125 125 ns 450 nC 225 0.70 C C/W MAX UNITS 1.5 V 125 ns RFG60P06E Rev. B ...
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... CAPABILITY AS FOLLOWS: TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (ms) FIGURE 5. PEAK CURRENT CAPABILITY 150 175 θ 175 T C – ----------------------- - 150 RFG60P06E Rev. B ...
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... DUTY CYCLE = 0.5% MAX V = -10V -60A GS D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 2 -250µA D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 120 160 200 o C) 120 160 200 o C) RFG60P06E Rev. B ...
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... TIME (µ G(ACT) CONSTANT GATE CURRENT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 10 90% 10% 50% PULSE WIDTH V GS FIGURE 17. RESISTIVE SWITCHING WAVEFORMS - DSS -7.5 -5.0 -2 G(REF) I G(ACT OFF t d(OFF 10% 90% 50% 90% RFG60P06E Rev. B ...
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... Test Circuits and Waveforms g(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT G(REF) Q g(TH -10V - g(-10) Q g(TOT) FIGURE 19. GATE CHARGE WAVEFORMS -20V GS RFG60P06E Rev. B ...
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... GATE RGATE - LGATE RIN S1A S2A S1B S2B EGS 8 - ESG RDRAIN + EBREAK VTO - - MOS2 21 11 MOS1 6 DBREAK CIN RSOURCE 8 RBREAK EDS 8 - DRAIN 2 LDRAIN DBODY LSOURCE 3 7 SOURCE 18 RVTO 19 - VBAT + RFG60P06E Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...