RFG60P06E Fairchild Semiconductor, RFG60P06E Datasheet - Page 2

• Manufacturer Part Number: RFG60P06E
• Description: 60a, 60v, 0.030 Ohm, Esd Rated, P-channel Power Mosfet
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate To Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Diode Reverse Recovery Time
1. T
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
MIL-STD-883, Category B(2)
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
T
C
T
= 25
C
= 25
o
C, Unless Otherwise Specified
o
C
SYMBOL
SYMBOL
V
Q
r
BV
t
Q
Q
DS(ON)
t
d(OFF)
C
C
GS(TH)
R
I
d(ON)
C
R
I
t
g(TOT)
V
DSS
GSS
t
g(-10)
OFF
g(TH)
OSS
ON
RSS
ISS
θJC
θJA
t
t
DSS
t
SD
rr
r
f
I
V
V
V
V
I
V
R
R
V
V
V
V
f = 1MHz
I
I
D
D
SD
SD
GS
DS
GS
GS
DD
L
GS
GS
GS
GS
DS
= 250µA, V
= 60A, V
= 1.0Ω, V
= 45A
= 45A, dI
= V
= -60V,
= 0V
= ±20V
= -30V, I
= 0 to -20V
= 0 to -10V
= 0 to -2V
= -25V, V
= 2.5Ω
TEST CONDITIONS
DS
TEST CONDITIONS
, I
GS
GS
D
SD
D
J
GS
GS
, T
= -10V
= 250µA
= 30A,
/dt = 100A/µs
= -10V,
DGR
DSS
STG
= 0V
= 0V,
DM
pkg
GS
SD
AS
T
T
V
I
R
D
D
D
L
C
C
DD
L
= 60A,
= 0.8Ω
= 25
= 150
= -48V,
o
C
o
C
Refer to Peak Current Curve
Refer to UIS Curve
RFG60P06E
MIN
-60
MIN
-55 to 175
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±±20
1.43
215
300
260
-60
-60
60
2
7200
1700
TYP
325
20
60
65
20
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.030
MAX
0.70
100
125
125
450
225
-50
15
80
MAX
-4
-1
125
-
-
-
-
-
-
-
-
1.5
RFG60P06E Rev. B
UNITS
W/
UNITS
o
o
UNITS
KV
o
o
o
W
V
V
V
A
C/W
C/W
nC
nC
nC
µA
µA
nA
pF
pF
pF
C
C
C
ns
ns
ns
ns
ns
ns
o
Ω
V
V
ns
V
C