FGW15N40A Fairchild Semiconductor, FGW15N40A Datasheet
FGW15N40A
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FGW15N40A Summary of contents
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... E G Pin 1 TSSOP-8 ©2005 Fairchild Semiconductor Corporation FGW15N40A Rev. A2 General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applica- tions where board space is a premium. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where bigger, more ex- pensive packages are impractical ...
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... Current Fall Time fI Thermal Characteristics R Thermal Resistance Junction-Case θJA Notes: 1. Pulse Duration = 100µsec 2 2. Mounted inch 1oz copper pad FGW15N40A Rev 25°C unless otherwise noted A Parameter = 25°C C Package TSSOP - 25°C unless otherwise noted A Test Conditions = 1mA, V ...
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... PULSE DURATION = 100µ -40 - CASE TEMPERATURE (°C) C Figure 5. Collector to Emitter Saturation Voltage vs Case Temperature FGW15N40A Rev. A2 160 T 140 PULSE DURATION = 100µs 120 100 80 Waveforms in descending order 3.5V ...
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... GE Figure 9. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 0. 1mA 0.7 0.65 0.6 0.55 0.5 0.45 0.4 -40 - CASE TEMPERATURE (°C) C Figure 11. Gate to Emitter Threshold Voltage vs Case Temperature FGW15N40A Rev. A2 (Continued - 150A 120A 90A 60A 2.5 3 3.5 4 0.5 Figure 8. Collector to Emitter On-State Voltage vs ...
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... Q , GATE CHARGE (nC) G Figure 15. Gate Charge 2.0 DUTY CYCLE - DESCENDING ORDER 1.0 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 - Figure 17. Normalized Transient Thermal Impedance, Junction to Case FGW15N40A Rev. A2 (Continued off 0.5 100 125 150 0 Figure 14. Switching Time vs Gate Resistance 160 T = 25°C ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FGW15N40A Rev. A2 i-Lo™ PACMAN™ ImpliedDisconnect™ POP™ IntelliMAX™ Power247™ ISOPLANAR™ PowerEdge™ ...